Ba₂Ga₂O₅ is an inorganic oxide semiconductor compound combining barium and gallium oxides, belonging to the family of wide-bandgap semiconductors. This is primarily a research material under investigation for optoelectronic and photonic applications, with potential use in ultraviolet (UV) light emission, scintillation detection, and high-temperature electronic devices where gallium oxide's thermal stability and wide bandgap are advantageous. Engineers consider barium gallate compounds as alternatives to traditional semiconductors when extreme UV transparency, radiation hardness, or operation above 400°C is required, though practical device integration remains largely in the development phase.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 119.6 | GPa | — | ||
Shear Modulus(G) | 67.78 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3356 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.365 | eV/atom | — |