Ba2 Fe2 S2 O1 F2
semiconductorBa₂Fe₂S₂O₁F₂ is an oxyfluoride semiconductor compound combining barium, iron, sulfur, oxygen, and fluorine—a rare mixed-anion system that represents an emerging class of materials in solid-state chemistry. This compound is primarily of research interest rather than established industrial production, studied for its potential in photocatalysis, energy storage, and optoelectronic applications where the combination of oxide and fluoride anion frameworks may enable tunable band gaps and enhanced charge transport. The material exemplifies the growing exploration of complex oxychalcogenide semiconductors as alternatives to conventional single-anion semiconductors, with potential relevance to next-generation photovoltaic and catalytic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |