Ba2 Cu1 W1 O6

semiconductor

· Ba2 Cu1 W1 O6

Ba₂Cu₁W₁O₆ is a complex oxide ceramic compound combining barium, copper, and tungsten in a perovskite-derived structure, classified as a semiconductor. This material is primarily of research interest rather than established industrial production, studied for its potential in electrochemical and optical applications where the mixed-metal composition offers tunable electronic properties. Its appeal lies in the ability to engineer band gaps and electron transport through the copper-tungsten coupling, making it a candidate for emerging energy conversion and sensing technologies where conventional oxide semiconductors fall short.

photocatalysis researchelectrochemical sensorsthin-film electronicsoxide semiconductor developmentenergy materials researchfunctional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.04040	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.493	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba2 Cu1 W1 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control