Ba12In4S19

semiconductor

· Ba12In4S19

Ba12In4S19 is a ternary chalcogenide semiconductor compound combining barium, indium, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of metal sulfide semiconductors and is primarily studied in research contexts for its potential in photovoltaic, optoelectronic, and solid-state device applications. The barium-indium-sulfide system is notable for exploring new semiconductor compositions with tunable bandgaps and potential advantages in thin-film solar cells, photocatalysis, or infrared optics compared to more conventional II-VI or III-V semiconductors.

thin-film photovoltaicsoptoelectronic researchphotocatalytic devicesinfrared detectorssolid-state materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.560	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba12In4S19

Electrical Properties

Regulatory Screening

Environmental

Export Control