Ba₁Zn₁Sn₄O₈ is an inorganic oxide semiconductor compound combining barium, zinc, and tin oxides in a crystalline structure. This material belongs to the family of mixed-metal oxides and represents a research-phase compound with potential applications in optoelectronics and catalysis where the combination of these three metal cations offers tunable electronic properties unavailable in binary oxide systems. Engineers investigating this compound would be evaluating it for niche roles where the specific band gap, defect chemistry, or catalytic surface activity of this ternary system provides advantages over conventional single-component oxides or more established mixed-metal semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05940 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.627 | eV/atom | — |