Ba1 Zn1 Bi4 O8

semiconductor

· Ba1 Zn1 Bi4 O8

Ba₁Zn₁Bi₄O₈ is a mixed-metal oxide semiconductor belonging to the bismuth-based oxide family, combining barium, zinc, and bismuth cations in a layered perovskite-like structure. This compound is primarily of research interest for photocatalytic and optoelectronic applications, where bismuth oxides are valued for their narrow bandgaps and visible-light activity; it remains an experimental material rather than an established industrial commodity. The bismuth-zinc-barium oxide system is being investigated as an alternative to traditional semiconductors for photocatalysis, sensing, and potentially photovoltaic devices where visible-light responsivity and chemical stability are design drivers.

photocatalytic applicationsvisible-light sensorsresearch semiconductorsenvironmental remediationoptoelectronic devicesmaterials research & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.387	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Zn1 Bi4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control