Ba1 Ti4 Zn1 O8

semiconductor

· Ba1 Ti4 Zn1 O8

Ba₁Ti₄Zn₁O₈ is a mixed-metal oxide semiconductor compound combining barium, titanium, and zinc in a complex perovskite-related crystal structure. This material belongs to the family of multivalent oxide semiconductors and is primarily of research interest for its potential in electronic and photocatalytic applications, where the combination of transition metals offers tunable band structure and defect chemistry compared to single-phase alternatives like TiO₂ or ZnO.

photocatalysis researchsemiconductor device developmentdielectric materialsthin-film electronicsenvironmental remediation (experimental)electronic ceramics (emerging)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00330	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.684	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Ti4 Zn1 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control