Barium telluride (BaTe) is a binary semiconductor compound belonging to the rock-salt crystal structure family, formed from alkaline earth metal barium and chalcogen tellurium. This material is primarily of research interest for thermoelectric applications and as a precursor in semiconductor device development, where its wide bandgap and moderate mechanical stiffness make it potentially valuable for high-temperature energy conversion and optoelectronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.50 | GPa | — | ||
Shear Modulus(G) | 20.52 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7679 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.743 | eV/atom | — |