Ba1 Sb4 O8

semiconductor

· Ba1 Sb4 O8

Ba₁Sb₄O₈ is an inorganic oxide semiconductor compound containing barium and antimony in a mixed-valence structure. This is a research-phase material primarily of interest in solid-state chemistry and materials science for its potential electronic and optical properties within the broader family of complex metal oxides. While not yet established in mainstream industrial production, compounds in this family are investigated for potential applications in photoelectrochemistry, sensing, and advanced electronic devices where layered or mixed-valence oxide semiconductors offer tunable bandgaps and catalytic activity.

research semiconductorsphotocatalytic materialsphotoelectrochemical cellsgas sensing devicessolid-state electronic researchoxide thin films

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.473	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Sb4 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control