Ba1 Nd1 Mn2 O6

semiconductor

· Ba1 Nd1 Mn2 O6

Ba₁Nd₁Mn₂O₆ is a mixed-valence perovskite-related oxide semiconductor containing barium, neodymium, and manganese. This is an experimental research compound studied primarily for its electrical and magnetic properties, part of a broader family of rare-earth manganates investigated for applications requiring combined semiconducting and magnetic functionality. The material is not yet in widespread commercial use but is of interest in materials research for potential applications in magnetic devices, multiferroic systems, and solid-state electronics where tailored electronic transport and magnetic ordering are needed.

magnetic semiconductor researchsolid-state electronics developmentmultiferroic material studiesrare-earth oxide compoundsexperimental device materialsmagnetoelectric applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	163.7	GPa	—
Shear Modulus(G)	69.61	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00470	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.641	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Nd1 Mn2 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control