Ba1 Mn1 V2 Ag2 O8

semiconductor

· Ba1 Mn1 V2 Ag2 O8

Ba₁Mn₁V₂Ag₂O₈ is a mixed-metal oxide semiconductor containing barium, manganese, vanadium, and silver in a complex crystalline structure. This is primarily a research compound studied for its electronic and magnetic properties rather than an established commercial material; compounds in this family are of interest for potential applications in solid-state electronics and energy conversion where the interplay between transition metals and noble metal dopants can be engineered to create novel electrical behavior.

experimental semiconductor researchmixed-valence oxide systemssolid-state electronicsmagnetoelectric materialsenergy storage/conversion (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	80.88	GPa	—
Shear Modulus(G)	30.65	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6019	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.089	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Mn1 V2 Ag2 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control