Ba1 Mg1 V4 O8

semiconductor

· Ba1 Mg1 V4 O8

Ba₁Mg₁V₄O₈ is a mixed-metal oxide semiconductor compound containing barium, magnesium, and vanadium. This is a research-phase material studied for its electronic and structural properties within the vanadium oxide family, which has attracted interest for potential applications in catalysis, energy storage, and electronic devices where transition metal oxides offer tunable conductivity and redox activity.

vanadium oxide semiconductorscatalytic materials researchenergy storage electrodesmixed-metal oxide electronicssolid-state device developmentmaterials science exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	115.9	GPa	—
Shear Modulus(G)	14.67	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01680	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.489	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Mg1 V4 O8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control