Ba₁Mg₁Sb₄O₈ is an ternary oxide semiconductor compound combining barium, magnesium, and antimony in a mixed-valent structure. This material is primarily investigated in research contexts for potential optoelectronic and photocatalytic applications, as antimony-based oxides are known for visible-light absorption and charge-carrier mobility. While not yet widely commercialized, compounds in this family are of interest for next-generation solar cells, environmental remediation catalysts, and wide-band-gap semiconductor devices where layered or complex oxide architectures offer advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00280 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.658 | eV/atom | — |