BaLiSi is an experimental ternary compound combining barium, lithium, and silicon elements, likely investigated as a wide-bandgap semiconductor or functional material for advanced applications. This composition sits within the broader family of metal silicides and mixed-cation semiconductors, which are primarily of research interest rather than established commercial materials. The material's potential relevance lies in optoelectronic devices, energy storage systems, or high-temperature semiconductor applications where the combined properties of its constituent elements could offer advantages over conventional single-phase semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03850 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2600 | eV/atom | — |