Ba1 La1 Mn2 O6

semiconductor

· Ba1 La1 Mn2 O6

Ba1La1Mn2O6 is a mixed-valence perovskite-based oxide semiconductor composed of barium, lanthanum, and manganese. This is a research-phase compound studied primarily for its electronic and magnetic properties rather than a commercially established material. The material is investigated for potential applications in solid-state electronics, magnetoelectronic devices, and solid-oxide fuel cell components, where the mixed-valence Mn sites and layered perovskite structure can enable tunable electrical conductivity and magnetic behavior; it represents an emerging class of functional oxides where engineers explore trade-offs between charge mobility, thermal stability, and catalytic activity.

solid-state electronics researchmagnetoelectric devicesoxygen-ion conductorscatalytic applicationsfunctional oxide research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00370	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.687	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 La1 Mn2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control