Ba1 Hf2 As1

semiconductor

· Ba1 Hf2 As1

Ba₁Hf₂As₁ is a ternary intermetallic semiconductor compound combining barium, hafnium, and arsenic elements. This material is primarily of research interest rather than established industrial production, belonging to the family of heavy-element semiconductors and intermetallic compounds being explored for advanced electronic and thermoelectric applications. The combination of hafnium (a refractory metal) with arsenic (a semiconductor-forming pnictogen) in a barium-stabilized structure suggests potential for high-temperature stability and unique electronic properties, though practical deployment remains limited to specialized research contexts.

thermoelectric researchhigh-temperature semiconductorsexperimental electronicsintermetallic compound developmentmaterials screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00490	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5410	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Hf2 As1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control