Ba1 Ge2 B1

semiconductor

· Ba1 Ge2 B1

Ba₁Ge₂B₁ is an experimental ternary semiconductor compound combining barium, germanium, and boron in a fixed stoichiometric ratio. This material belongs to the broader family of mixed-metal semiconductors and represents research-level work into novel bandgap engineering and crystal structure design. While not yet established in mainstream industrial production, compounds in this compositional space are being investigated for potential optoelectronic and thermoelectric applications where the combination of light elements (boron) with heavier semiconductors (germanium) and alkaline-earth metals (barium) may enable tunable electronic properties.

experimental semiconductorsbandgap engineering researchthermoelectric devicesoptoelectronics prototypingmaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00460	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6440	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Ge2 B1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control