Ba₁Ga₂Te₄ is a ternary semiconductor compound belonging to the II-IV-VI class of materials, combining barium, gallium, and tellurium in a layered crystal structure. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its wide bandgap and thermal stability make it a candidate for next-generation solar cells, infrared detectors, and high-temperature electronic devices. While not yet in widespread commercial production, materials in this family are explored as alternatives to conventional III-V semiconductors when enhanced chemical stability or specific optical properties are needed.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.56 | GPa | — | ||
Shear Modulus(G) | 15.27 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6876 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7900 | eV/atom | — |