Ba1Ga2 is a binary intermetallic compound composed of barium and gallium, belonging to the class of III-V semiconductor materials and related metal-gallium systems. This compound is primarily of research interest as a potential wide-bandgap semiconductor; it exists largely in the academic literature rather than as a commercial engineering material, with applications being explored in emerging optoelectronic and high-temperature electronic device research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00260 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5300 | eV/atom | — |