BaAlSi is an intermetallic compound combining barium, aluminum, and silicon—a semiconductor material that belongs to the class of ternary metal silicides. This compound is primarily of research and developmental interest, representing an emerging material system rather than an established industrial standard; its potential lies in thermoelectric applications, optoelectronics, and specialized semiconductor devices where the combination of these elements may offer unique band structure or charge carrier properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.03 | GPa | — | ||
Shear Modulus(G) | 38.40 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4720 | eV/atom | — |