Ba1 Al1 Ge1

semiconductor

· Ba1 Al1 Ge1

BaAlGe is an intermetallic semiconductor compound combining barium, aluminum, and germanium in a 1:1:1 stoichiometry. This is a research-phase material within the broader family of ternary semiconductors and Heusler-like compounds, investigated for potential optoelectronic and thermoelectric applications where the combination of these elements offers tunable electronic band structure. The material remains largely exploratory rather than production-volume, with interest driven by its potential for solid-state energy conversion, photovoltaic devices, and high-temperature electronic applications where conventional semiconductors reach performance limits.

experimental thermoelectric devicesadvanced semiconductor researchoptoelectronic compound developmenthigh-temperature electronicsphotovoltaic researchintermetallic device engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	45.17	GPa	—
Shear Modulus(G)	34.56	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03180	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5650	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba1 Al1 Ge1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control