Ba₁Ag₂Ge₁Se₄ is a quaternary chalcogenide semiconductor composed of barium, silver, germanium, and selenium. This is a research-phase compound rather than an established industrial material, belonging to the ternary/quaternary chalcogenide family that shows potential for nonlinear optical, photovoltaic, or infrared applications due to the wide bandgap and heavy-element composition typical of such systems. Engineers evaluating this material should recognize it as exploratory; interest would center on fundamental optoelectronic properties or crystal engineering rather than established high-volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00230 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7310 | eV/atom | — |