Ba(GaTe2)2 is a ternary chalcogenide ceramic compound combining barium, gallium, and tellurium elements, belonging to the family of metal telluride semiconductors. This is a research-phase material studied primarily for optoelectronic and nonlinear optical applications, particularly in infrared photonics where wide bandgap semiconductors with strong light-matter coupling are needed. The material is notable for potential use in mid-to-far infrared detection and frequency conversion devices, though it remains largely in experimental development rather than widespread industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.48 | - | — | ||
| ↳ | 11.79 range 9.701–13.88median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — |