B6P is a boron phosphide-based semiconductor compound, a member of the III-V semiconductor family that combines boron and phosphorus. It is primarily of research and emerging-technology interest rather than established high-volume production, with potential applications in wide-bandgap electronics and high-temperature semiconductor devices. The material is notable for its potential to operate in extreme thermal and radiation environments where conventional silicon semiconductors fail, making it attractive for aerospace, nuclear, and advanced power electronics research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 200.4 | GPa | — | ||
Poisson's Ratio(ν) | 0.1400 | - | — | ||
Shear Modulus(G) | 192.1 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.588 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.300 | eV | — | ||
| ↳ | 2.553 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 7.820 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -211.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3057 | eV/atom | — |