B4 C6 N12

semiconductor

· B4 C6 N12

B₄C₆N₁₂ is a boron-carbon-nitride ceramic compound combining elements from the boron nitride and boron carbide families, representing an emerging material in the wide-bandgap semiconductor category. This ternary compound is primarily of research and development interest, being investigated for high-temperature semiconducting applications and potential use in extreme-environment electronics where conventional silicon-based devices fail. The material's appeal lies in its thermal stability and potential for operating at elevated temperatures, making it a candidate for next-generation power electronics and high-temperature sensing in industries requiring extreme conditions beyond current commercial semiconductors.

high-temperature power electronicsextreme-environment semiconductorswide-bandgap device researchaerospace avionics under thermal stressthermal sensing at elevated temperaturesadvanced material research & development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.213 range 2.011–2.415median of 2 measurements	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1610 range -0.1640–-0.1580median of 2 measurements	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B4 C6 N12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control