B3As is a boron arsenide ceramic compound, a member of the III-V semiconductor and refractory ceramic family. This material is primarily of research and emerging-application interest, valued for its potential high thermal conductivity, wide bandgap, and hardness characteristics that position it as a candidate for next-generation thermal management and high-temperature electronic applications. While not yet widely commercialized compared to established ceramics like aluminum nitride or silicon carbide, B3As represents an active area of materials development for applications demanding superior heat dissipation combined with chemical and thermal stability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.058 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5496 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.4012 | eV/atom | — |