B12P2 is a compound semiconductor belonging to the boron phosphide material family, characterized by its wide bandgap properties and exceptional hardness. This material is primarily of research and emerging industrial interest for high-temperature, high-power electronic devices and advanced optoelectronic applications where thermal stability and electrical performance are critical. Its notable advantages over conventional semiconductors include superior thermal conductivity and potential for deep-ultraviolet (UV) applications, making it attractive for next-generation power electronics and specialized photonic systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 200.4 | GPa | — | ||
Shear Modulus(G) | 192.1 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.553 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3060 | eV/atom | — |