B12 As2

semiconductor

· B12 As2

B12As2 is a III-V compound semiconductor formed from boron and arsenic, belonging to the family of binary semiconducting materials. This material is primarily of research interest for optoelectronic and high-frequency electronic applications, as compounds in this class can exhibit wide bandgaps and high carrier mobility suitable for specialized device functions. While less commercially established than more common III-V semiconductors like GaAs, B12As2 represents part of the broader exploration into alternative semiconductor compositions for next-generation electronics and quantum applications.

research semiconductorsoptoelectronic deviceshigh-frequency electronicswide-bandgap materialsquantum device prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	185.5	GPa	—
Shear Modulus(G)	171.6	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.739	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1700	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

B12 As2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control