B₁Br₁N₂Sr₂ is an experimental semiconductor compound combining boron nitride chemistry with strontium and bromine elements, representing an emerging class of mixed-anion semiconductors. While not yet commercially established, this material belongs to the broader family of wide-bandgap semiconductors and ionic compounds that researchers are investigating for next-generation optoelectronic and solid-state applications where conventional materials reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 49.93 | GPa | — | ||
Shear Modulus(G) | 18.32 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.598 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.580 | eV/atom | — |