AuSiO₂F is a composite or mixed-phase semiconductor material combining gold, silicon dioxide, and fluorine—an experimental compound not yet widely commercialized. This material family is being researched for optoelectronic and sensing applications where the gold component provides electrical conductivity and plasmonic properties, while the silica matrix offers structural stability and the fluorine enhances surface reactivity or doping effects. Its novelty lies in combining noble metal properties with semiconductor oxide characteristics, positioning it as a candidate for next-generation devices requiring both optical responsiveness and chemical sensitivity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3000 | eV | — | ||
Magnetic Moment(μB) | 3.590e-16 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.160 | eV/atom | — |