AuNbON₂ is an experimental ternary nitride-oxide semiconductor compound containing gold, niobium, oxygen, and nitrogen. This material belongs to the emerging class of mixed-anion semiconductors being investigated for optoelectronic and photocatalytic applications where conventional binary semiconductors (like GaN or TiO₂) show limitations. Research into gold-niobium-based compounds focuses on tunable bandgaps, enhanced charge carrier dynamics, and potential use in photocatalysis, though the material remains largely in the laboratory phase with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.0000114 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data