AuNbON2

semiconductor

· AuNbON2

AuNbON₂ is an experimental ternary nitride-oxide semiconductor compound containing gold, niobium, oxygen, and nitrogen. This material belongs to the emerging class of mixed-anion semiconductors being investigated for optoelectronic and photocatalytic applications where conventional binary semiconductors (like GaN or TiO₂) show limitations. Research into gold-niobium-based compounds focuses on tunable bandgaps, enhanced charge carrier dynamics, and potential use in photocatalysis, though the material remains largely in the laboratory phase with limited commercial deployment.

photocatalytic applicationsoptoelectronic deviceslight-harvesting systemssemiconductor researchadvanced coatingsexperimental materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9000	eV	—
Magnetic Moment(μB)	-0.0000114	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AuNbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control