Au1N1 is an experimental gold nitride semiconductor compound that represents an emerging class of metal nitride materials with potential for advanced electronic and photonic applications. This research-phase material combines gold with nitrogen in a stoichiometric ratio, positioning it within the broader family of transition metal nitrides being investigated for next-generation device physics. While not yet established in high-volume industrial production, gold nitride compounds are of significant scientific interest for their potential in wide-bandgap semiconductors, hard coatings, and optoelectronic devices where the unique properties of gold could enable novel functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 135.5 | GPa | — | ||
Shear Modulus(G) | -3.200 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.651 | eV/atom | — |