AsYO₃ is an experimental compound combining arsenic, yttrium, and oxygen, belonging to the rare-earth oxide semiconductor family. While not yet established in commercial production, materials in this compositional space are of interest for potential optoelectronic and high-temperature semiconductor applications, though arsenic-containing compounds require careful handling due to toxicity concerns. Research into yttrium-based oxides with group 15 dopants focuses on wide-bandgap semiconductors and phosphor materials, but AsYO₃ remains primarily a laboratory compound requiring further development before industrial viability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.3000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.01500 | μB | — | ||
| ↳ | 0.00604 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.275 | eV/atom | — | ||
| ↳ | 1.480 | eV/atom | — |