AsRuS is a ternary semiconductor compound combining arsenic, ruthenium, and sulfur. This is a research-phase material within the chalcogenide semiconductor family, studied primarily for its potential electronic and optoelectronic properties rather than as an established commercial product. Engineers would consider this material only in advanced development contexts where novel band gap engineering, thermoelectric performance, or photocatalytic activity could address niche requirements that conventional semiconductors cannot meet.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.899 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.200 | eV | — | ||
| ↳ | 0.8920 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5283 | eV/atom | — |