AsRuS is a ternary semiconductor compound combining arsenic, ruthenium, and sulfur. This is a research-phase material within the chalcogenide semiconductor family, studied primarily for its potential electronic and optoelectronic properties rather than as an established commercial product. Engineers would consider this material only in advanced development contexts where novel band gap engineering, thermoelectric performance, or photocatalytic activity could address niche requirements that conventional semiconductors cannot meet.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.899 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.200 | eV | Measured | ||
| ↳ | 0.8920 | eV | DFT · OptB88vdW | ||
| ↳ | 0.9870 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 21.18 | - | DFT · OptB88vdW | ||
| ↳ | 18.55 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 31.84 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.5283 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data