AsNbON2

semiconductor

· AsNbON2

AsNbON2 is an experimental ternary compound semiconductor composed of arsenic, niobium, oxygen, and nitrogen. This material belongs to the family of mixed-anion semiconductors and is primarily investigated in research contexts for its potential electronic and optoelectronic properties arising from its complex crystal structure. While not yet established in mainstream industrial production, materials in this class are of interest for next-generation semiconductor applications where tunable bandgaps and novel transport properties could offer advantages over conventional binary semiconductors.

experimental semiconductorsoptoelectronic researchwide-bandgap electronicsphotovoltaic developmenthigh-temperature electronicscompound semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.200	eV	—
Magnetic Moment(μB)	-0.0000643	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AsNbON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control