AsLaN₃ is an experimental ceramic compound in the metal nitride family, where arsenic (As) and lanthanum (La) form a ternary nitride phase. This material exists primarily in research contexts and represents an emerging class of refractory and electronic ceramics with potential applications in high-temperature environments and advanced semiconductor research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.004 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.480 | eV/atom | — |