Arsenic triiodide (AsI₃) is a layered semiconductor compound belonging to the trihalide family, characterized by weak van der Waals interactions between atomic layers. This material is primarily of research interest for next-generation optoelectronic and photovoltaic devices, where its layered crystal structure and tunable bandgap make it a candidate for two-dimensional device engineering and perovskite-alternative absorber layers. AsI₃ remains largely experimental; its appeal lies in potential alternatives to conventional semiconductors in emerging applications where layer-dependent electronic properties and mechanical flexibility are advantageous.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13.93 | GPa | — | ||
Exfoliation Energy(Eexf) | 96.39 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 9.840 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.022 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.290 | eV | — | ||
| ↳ | 2.016 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 23.91 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -343.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.1682 | eV/atom | — | ||
| ↳ | -0.1958 | eV/atom | — |