AsHO is an arsenic-containing oxide ceramic compound with potential applications in specialized electronic and photonic materials research. While not widely established in mainstream industrial production, arsenic oxide ceramics are of interest in the semiconductor and optoelectronic communities for their unique electronic properties and chemical stability in specific operating environments. Engineers evaluating this material should confirm its processing maturity and availability, as it remains primarily a research-phase compound rather than a production-standard ceramic.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 105.0 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 45.18 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.887 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.7910 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 11.00 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 26.19 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.109 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.2591 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data