AsAlO3 is a compound semiconductor in the arsenic-aluminum oxide family, representing an emerging material system for optoelectronic and photonic applications. This material is primarily of research and development interest rather than a mature commercial product, with potential applications in wide-bandgap semiconductor devices, UV photodetectors, and integrated photonic circuits where arsenic-based compounds offer tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 1.700 | eV | — | ||
Magnetic Moment(μB) | 0.0000666 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.712 | eV/atom | — | ||
| ↳ | 0.8600 | eV/atom | — |