As8U6 is an arsenic-uranium compound semiconductor with potential applications in nuclear and high-energy physics research contexts. This material represents an experimental composition within the arsenic-uranium family, which has been investigated for specialized radiation detection and nuclear energy applications due to the properties imparted by uranium's nuclear characteristics. Engineers evaluating this material should note that it falls outside conventional commercial semiconductor markets and would require specialized handling, licensing, and characterization for any proposed application.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 103.0 | GPa | — | ||
Shear Modulus(G) | 52.52 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01050 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7840 | eV/atom | — |