As8Th6 is an experimental intermetallic or compound semiconductor combining arsenic and thorium elements, primarily of academic and research interest rather than established commercial production. While thorium-containing materials have historically seen limited use in specialized nuclear and high-temperature applications, this specific composition is not widely documented in mainstream engineering practice, suggesting it remains in the research phase for investigating novel electronic or structural properties. Engineers considering this material should verify current literature and availability, as its actual performance characteristics and manufacturability for industrial applications are not yet standardized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 100.3 | GPa | — | ||
Shear Modulus(G) | 54.92 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08510 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.390 | eV/atom | — |