AS8 S10 is a semiconductor material, likely an arsenic-sulfur compound or similar chalcogenide-based system designed for specialized electronic or optoelectronic applications. This material family is typically explored in research contexts for niche semiconductor functions where conventional silicon or III-V semiconductors are unsuitable, such as infrared sensing, thin-film photovoltaics, or memory devices. The specific composition and processing route determine its electronic behavior, making it relevant for engineers working on novel device architectures or materials with unique bandgap and optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15.20 | GPa | — | ||
Shear Modulus(G) | 8.960 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.591 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1530 | eV/atom | — |