As₈Pa₆ is a compound semiconductor in the arsenic-phosphorus family, representing a III-V material system with mixed group V elements. This material is primarily of research and development interest for optoelectronic and high-frequency applications, where tuning the As/P ratio allows bandgap engineering for specific wavelength or operating frequency targets.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.054 | eV/atom | — |