As₈O₂₀ is an arsenic oxide semiconductor compound belonging to the family of metal oxide semiconductors with mixed-valence properties. This material is primarily of research interest in solid-state electronics and photonic applications, where its unique oxidation state and crystal structure make it relevant for exploring charge-transport phenomena and potential optoelectronic device functions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.560 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.104 | eV/atom | — |