As₃Na₁Zn₄ is a ternary compound semiconductor composed of arsenic, sodium, and zinc. This material belongs to the family of III-V and I-II-VI semiconductor compounds and is primarily of research interest rather than established in commercial production. The compound's potential applications lie in optoelectronic and thermoelectric devices, where mixed-valence and mixed-anion systems can exhibit unusual band structures; however, it remains largely in the experimental phase and is not widely adopted in conventional engineering applications compared to more mature semiconductors like GaAs or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2710 | eV/atom | — |