As3 Ga3 O12

semiconductor

· As3 Ga3 O12

As₃Ga₃O₁₂ is a mixed arsenic-gallium oxide compound belonging to the family of III-V semiconductor oxides. This material is primarily of research interest rather than established commercial production, being explored for optoelectronic and photonic device applications where its bandgap and crystal structure offer potential advantages in specialized wavelength ranges or radiation detection scenarios.

experimental photonicsradiation detectionwide-bandgap semiconductorsoptical windowsresearch optoelectronicscompound semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.198	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.527	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

As3 Ga3 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control