Arsenic trisulfide (As₂S₃) is a layered chalcogenide semiconductor compound with a layered crystal structure that enables exfoliation into thin sheets. It is primarily investigated in research contexts for infrared optics, nonlinear photonics, and emerging 2D materials applications, where its mid-infrared transparency and tunable electronic properties offer advantages over traditional semiconductors in specialized photonic devices and sensors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 127.5 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.893 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.890 | eV | — | ||
| ↳ | 2.058 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.45 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -271.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.3470 | eV/atom | — | ||
| ↳ | -0.1427 | eV/atom | — |