As₂Te₃ is a layered V-VI semiconductor compound belonging to the chalcogenide family, characterized by a rhombohedral crystal structure and moderate mechanical stiffness. This material is primarily investigated in research contexts for infrared optics, thermoelectric energy conversion, and phase-change memory applications, where its tunable bandgap and anisotropic properties offer advantages over conventional semiconductors in specialized low-temperature and mid-infrared wavelength regimes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.20 | GPa | — | ||
Shear Modulus(G) | 25.78 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00710 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.00800 | eV/atom | — |