As₂I₄F₁₂ is an arsenic iodide fluoride compound that belongs to the family of mixed-halide semiconductors and represents an emerging materials research area rather than an established commercial material. This composition combines arsenic, iodine, and fluorine in a structure that may exhibit semiconducting or photovoltaic properties of interest to researchers exploring next-generation optoelectronic materials. While not yet widely deployed in mainstream engineering applications, compounds in this chemical family are being investigated for their potential in advanced photonic devices, radiation detection, and thin-film electronics where the mixed-halide composition could offer tunable electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00530 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.643 | eV/atom | — |