As16S12 is a semiconductor compound from the arsenic-sulfur material family, likely a layered or amorphous chalcogenide phase used in niche optoelectronic and photonic applications. This composition sits at an intermediate stoichiometry between binary As-S semiconductors and is primarily of research interest for infrared optics, non-linear optical devices, and potentially phase-change memory systems where the specific As-to-S ratio offers tuned electronic properties. Engineers would evaluate this material when conventional semiconductors (Si, GaAs) are insufficient for mid-infrared transparency or when amorphous switching behavior is advantageous over crystalline alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11.80 | GPa | — | ||
Shear Modulus(G) | 6.520 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.808 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1090 | eV/atom | — |